Cleaning Technology in Semiconductor Device Manufacturing ...: Proceedings of the International SymposiumElectrochemical Society, 2003 - Semiconductor wafers |
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acid active chemistry aerosols AFEOL aluminum ambient anneal aspect ratio chemical chemistry cleaning process cleaning solution co-solvent contact angle contamination copper cryogenic cleaning damage DEHP density deposition device dielectric dielectric constant dilute dissolution effect Electrochemical electrode ellipsometry etch rate EXPERIMENTAL film fluoride fluorine gate stack HfO2 high-k high-k dielectric hydrogen peroxide hydrophilic hydrophobic increase interface layer liquid low-k main etch materials measured mechanism megasonic metal mixture nitride nitrogen nozzle OH radical oxide thickness oxygen concentration ozonated water ozone particle removal efficiency photoresist plasma poly-Si polymer porous post-etch RCA cleaning residue removal resistance rinse sample scCO2 Clean SEMATECH semiconductor shown in Figure shows silicon dioxide silicon nitride silicon surface single wafer SiO2 soft etch solubility solvent sonoluminescence sound pressure structures substrate supercritical surfactants Technology temperature treatment trench ultra pure water wafer cleaning wafer surface wet cleaning
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Page 106 - International Symposium on Cleaning Technology in Semiconductor Device Manufacturing. J. Ruzyllo and RE Novak eds., Vol.
Page 86 - Department of Chemical and Environmental Engineering University of Arizona, Tucson, AZ 85721...
Page 121 - Fourth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, J. Ruzyllo and R.
Page 51 - HF concentration at 22 °C is shown in Figure 3. As can be seen from Figure 3, the...
Page 152 - REFERENCES 1. The International Technology Roadmap for Semiconductors Semiconductor Industry Association, San Jose, CA, 1999. 2. Q. Han, ES Moyer, et al.. Proceedings of the International Interconnect Technology
Page 321 - Physique des Liquides et Electrochimie, Universite Pierre et Marie Curie 4 place Jussieu, 75252 PARIS CEDEX 05, France S.Mege ALTIS Semiconductor, 224, Bd J.
Page 181 - L. Bousse, S. Mostarshed, B. van der Shoot, NF de Rooij, P. Gimmel and W Gopel, in Journal of Colloid and Interface Science.
Page 121 - Oct. 10 - 15, 1993, in Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, 184th Electrochemical Society Meeting, 94-7, (The Electrochemical Society, Pennington, NJ, 1994), p.
Page 253 - MJ Kamlet, JLM Abboud, MH Abraham, RW Taft, J. Org. Chem. 48, 2877 (1983).
Page 392 - Phenomena, 76-77, 1 1 9 (200 1 ) 3. B. Onsia, E. Schellkes, R. Vos, S. De Gendt, O. Doll, A. Fester, B. Kolbesen, M. Hoffman, Z. Hatcher, K. Wolke, P. Mertens, M. Heyns, in Cleaning technology in Semiconductor Device Manufacturing VII, J.