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B Measurement of Lattice Constants
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activation energy annealing process Appendix arccos arsenic overpressure experiments atoms Bragg angle characteristic X-ray radiation construction COPPER CHARACTERISTIC X-RAY crystal structure defect concentration defect structure defects in semiconductor DETERMINE LATTICE CONSTANT diamond dynamic theory effect electron beam electron microprobe entropy equation experimental film GaAs GaAs sample gallium arsenide crystal gallium arsenide sample gallium diffraction conics gallium phosphide germanium and gallium Gibbs free energy Hr DIFFRACTION PATTERN ILLUSTRATION indium antimonide interstitial Kossel sphere Kossel-line pattern Kossel-line technique lattice-constant measurements lattice-point defects Laue lens-shaped figure measurements of lattice method normal obtained orientation original quenching data partial pressure planes predict pseudo-Kossel quenching and room-temperature quenching experiments ratio reciprocal lattice room-temperature annealing experiments sample quenched Schottky defect semiconductor crystals shown in Fig shown in Table stages of annealing steradians stereographic projection sublattice Swalin Ref thermal equilibrium unit cell vacancy formation vector wavelength well-defined activation energy X-ray diffraction