Electron Microprobe Study of Lattice-point Defects in Semiconductor Single Crystals |
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Contents
INTRODUCTION | 1 |
III | 11 |
Effects of LatticePoint Defects on the KosselLine | 46 |
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Common terms and phrases
absorption activation energy annealing process Appendix arccos arcsin atoms Bragg angle characteristic X-ray radiation construction COPPER CHARACTERISTIC X-RAY crystal structure defect structure defects in semiconductor DETERMINE LATTICE CONSTANT dynamic theory effect electron beam electron microprobe entropy equation Ewald experimental GaAs sample GALLIUM ARSENIDE CRYSTAL GALLIUM ARSENIDE SAMPLE GALLIUM DIFFRACTION CONICS gallium phosphide germanium and gallium GERMANIUM DIFFRACTION CONICS Gibbs free energy ILLUSTRATION indium antimonide interstitial Kossel sphere Kossel-line pattern Kossel-line technique lattice defects lattice-constant measurements lattice-point defects Laue measurements of lattice normal obtained orientation P(As partial pressure perfect crystal predicts quenched from 1100 quenching and room-temperature quenching experiments rate constant ratio reciprocal lattice room-temperature annealing experiments sample quenched Schottky defect Schottky vacancies semiconductor crystals shown in Fig stages of annealing standard deviation stereographic projection structure factor sublattice Swalin Ref temperature thermal equilibrium unit cell vacancy formation vector wavelength X-Ray Diffraction ΔΗ Κα