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angle annealing anode aperture appl applied voltage atoms barium titanate bias boundary c-axis calculated capacitance carrier characteristics coefficient constant crystallite curve decreases deformation density dependence detector diffusion diode discharge dislocations distribution effect electric field electron emission energy equation etching evaporated fiber axis Figure film frequency function germanium hole increases intensity ion beam ionization irradiation Japan kink kink band laser lattice layer length lifetime light magnetic field measured metal method microplasma negative resistance observed obtained optical oscillation oxide p-n junction particle phase photoconductivity photocurrent Phys plane plasma plasma expansion electrode plate polarization pressure pulse radiation ratio recombination reflectors region resistance resonator room temperature sample saturation screw dislocations shown in Fig shows silicon single crystals slip bands solid space charge specimen spherical reflector spots surface tellurium thermal thickness threshold tion vacuum valence band velocity wave width X-ray