Silicon-Based Optoelectronic Materials: Volume 298M. A. Tischler The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. |
Contents
A PHOTOLUMINESCENCE STUDY | 3 |
LUMINESCENCE STUDIES OF MBE GROWN SiSiGe QUANTUM WELLS | 21 |
XRAY INVESTIGATION OF STRAIN RELAXATION IN SHORTPERIOD | 27 |
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1993 Materials Research absorption alloy amorphous annealing anodization Appl atoms band bandgap blue shift calculated carriers chemical crystal crystallite current density dangling bonds decrease deposition device diffraction effect electrochemical electroluminescence electrolyte electron emitting energy epitaxy erbium excitation exciton experimental Figure films formation FTIR growth HF concentration hydrogen implantation increase infrared interface L-edge L.T. Canham laser LEPSi Lett light emission luminescence mA/cm² Materials Research Society measurements nanocrystallites observed optical oxidation oxygen p-Si p-type particles phonon photoluminescence photoluminescence PL Phys PL decay PL intensity PL peak PL spectra pore porosity porous Si porous silicon Proc quantum confinement quantum wire radiative Raman recombination refractive index region room temperature semiconductor shift shown in Fig shows SiGe signal SiH2 siloxene SiO2 solution spectroscopy spectrum stain-etched strain structure substrate superlattice Symp thermal thickness transition visible wafer waveguide wavelength X-ray