Gallium Arsenide and Related Compounds 1987: Proceedings of the Fourteenth International Symposium on Gallium Arsenide and Related Compounds Held in Heraklion, Crete, 28 September-1 October 1987
Aris Christou, Hans S. Rupprecht
Institute of Physics, 1988 - Compound semiconductors - 834 pages
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Murakami YihCheng Shih WH Price N Braslau KD Childs
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active annealing Appl applied atoms band calculated carrier channel characteristics compared composition concentration conduction constant corresponding crystal curve decrease deep defects density dependence deposition depth devices diffusion DISCUSSION dislocations donor doped effect electric electron emission energy epitaxial et al etching experimental fabricated field Figure frequency function GaAs GaAs and Related gate Greece grown growth heterostructures higher implanted increase indicate intensity interface laser lattice layer Lett lower material measurements method mobility n-type observed obtained optical peak performed Phys pressure properties quantum range reduced REFERENCES region Related Compounds reported resistance respectively samples scattering semiconductor shown in Figure shows spectra structure substrate superlattice surface Symp technique temperature thermal thickness transition trap undoped variation voltage wafer