The Journal of Materials Education, Volume 7Materials Research Laboratory, Pennsylvania State University, 1984 - Engineering |
Contents
Abstract | 605 |
Transport Properties of Composites | 615 |
Symmetry of Composite Materials | 627 |
Copyright | |
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Common terms and phrases
alloys applied Aspnes atoms BINARY METAL OXIDES--PART BINARY SYSTEMS c-Si calculated catalyst cations ceramic CHARACTERIZATION OF MATERIALS charge carriers chemical chemisorption COMPOSITE ELECTROCERAMICS concentration conductor constant copper density deposit dielectric function diffusion coefficient DIFFUSION IN BINARY effect electric field electrical conductivity ELECTRON GAS MODEL electron holes EPITAXY IN SEMICONDUCTOR equation equilibrium EXAFS example ferroelectric film given HETEROGENEOUS CATALYSIS HIGHER TUNGSTEN OXIDES hydrogenolysis impurities interface intrinsic intrinsic semiconductor ionic conductivity lattice layers liquid Materials Research measurements mechanism microscopically microstructure mobility module mole fraction n-type semiconductor Nonstoichiometric nucleation obtained optical osmium overlayer oxygen oxygen vacancies parameters particles Pennsylvania State University percolation phase Phys piezoelectric Po₂ polarization properties reaction region resistivity sample SEMICONDUCTOR RESEARCH shown in Fig SILICATE SILICATE MELTS SILICON CRYSTAL GROWTH solid stoichiometry structure substrate surface symmetry Symposium techniques temperature ternary thermal thickness valence band values velocity viscosity volume fraction