Parametric and Tunnel Diodes |
Contents
CHAPTER 3Tunnel Diodes | 31 |
CHAPTER 4Diode Characteristics Design and Fabrication | 51 |
CHAPTER 5Parametric Devices | 71 |
Copyright | |
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achieved applied assumed band bandwidth barrier becomes bias capacitance characteristic circuit components computed conductance considered constant converter curves depends determined device diffusion distributed doping effect efficiency electrical electrons element energy equal equation equivalent field Figure follows forward frequency gain given gives harmonic holes idling important increase input junction limited load loss low noise lower material maximum measured mhos microwave n-type noise factor nonlinear normalized obtained operating oscillator output p-n junction parametric amplifier parametric diode peak performance positive possible potential power gain pump pump frequency pump power ratio region relation represented resonant respectively semiconductor shown shown in Fig shows signal signal frequency similar solution stable temperature term theory tion tunnel diode unit values varies voltage wave zero