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admittance ALLOY JUNCTION TRANSISTOR amplifier amplitude analysis applied approximately band gap base region base spreading resistance bias biased blocking oscillator calculated capacitance capacitor carrier densities characteristics circuit of Fig collector current collector junction collector voltage common-base common-emitter conduction band configuration constant coupling network current amplification current density current gain cutoff frequency depletion layer determined diffusion diode discussed doped electric field electrons and holes emitter current emitter efficiency emitter junction equal equations equivalent circuit feedback fourpole parameters frequency dependence germanium GROWN JUNCTION TRANSISTOR high-frequency impurity injected input impedance linear load impedance load resistance low-frequency maximum multivibrator noise obtained ohms operating point P-N junction P-type Phys PNP transistor point-contact transistor power gain Proc pulse ratio relaxation oscillator resistors reverse reverse-biased semiconductor shown in Fig signal small-signal stability stage switching tran transducer gain transformer typical valence band values volts