Atomistic Mechanisms in Beam Synthesis and Irradiation of Materials: Volume 504This book, first published in 1999, focuses on understanding the atomistic processes that occur in metals, ceramics (including glasses) and polymers that are exposed to energetic beams for the purpose of synthesizing or modifying a material. In particular, emphasis is given to atomistic approaches for modelling and understanding experimental results. The science presented falls into four categories: (1) surface and thin-film microstructures driven by ion-beam processing, including mechanisms for driving preferential orientation in single-crystal and polycrystalline formations; (2) comparisons and contrasts in the mechanisms involved with high energy, ion-beam radiation and high-fluence-rate effects; (3) identification of mechanisms in beam-assisted synthesis of materials; and (4) atomistic modelling to describe improved mechanical and optical properties of coatings and layers treated with ion beams. Topics include: defects and modelling; irradiation effects in metals and alloys; energetic particle synthesis and mechanical properties; optical materials and nanoclusters; and polymers. |
Contents
From Point | 3 |
In Situ DLTS Measurement of Metastable Coupling Between | 15 |
Metastable Amorphous SiO2 Created by lon Bombardment | 21 |
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Alabama A&M University amorphous angle annealing Appl argon atoms calculated carbon cascade cluster ion beam cm² coating concentration contact angles crystalline crystals damage decrease defects density diffraction diffusion displacement effect electrical resistivity electron energy experimental Figure films deposited fluence formation heat treatment hydrogen IBAD implanted samples incident increase Instr intensity interstitial ion beam ion dose ion implantation ion irradiation ions/cm² laser lattice layer Lett LiNbO3 material measured metal Meth multilayers nanoclusters nanocrystals nitrogen nonlinear nonlinear optical Nucl observed optical absorption oxide oxygen parameters peak phase Phys PI films plasma polymer precipitates Proc properties quantum dots range ratio region resistivity room temperature Rutherford backscattering samples implanted sapphire shown in Fig shows silica silicon simulations SiO2 solid spectra spectrum sputtering structure substrate surface surface plasmon resonance thermal thickness vacancies voltage wavelength