Photomask and X-ray Mask Technology, Volume 1; Volume 2254SPIE, 1994 - Integrated circuits |
Contents
Masks for 0 25μm lithography 225403 | 3 |
New novolakbased positive EB resist EBR900 M1 225405 | 47 |
Attenuated phaseshift mask blanks with oxide or oxinitride of Cr or MoSi absorptive shifter | 60 |
Copyright | |
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alignment aperture attenuated back-etching calculated cassette chrome chrome films chuck contact hole conventional mask correction defocus deposited developed displacement distortion DRAM dry etching durability e-beam EBES4 edge effect electron beam error evaluated excimer laser exposure dose exposure latitude Figure film thickness flexure focus g-line HT-PSMs i-line illumination improved inspection intensity interferometer Japan KrF excimer laser layer mask blanks mask fabrication mask inspection mask pattern material measurement MEBES method metrology module opaque defect OPC mask optical lithography parameters particles pattern placement pellicle phase shift phase-shifting mask photomasks pinhole placement accuracy printability printed proximity effect refractive index resolution reticle scan shaping mask shift mask shifter shown in Fig shows SiC membrane silicon simulation SiO2 specifications SPIE stepper structure substrate surface Table technique temperature transmission transmittance vacuum W/Si wafer wavelength writing X-ray lithography X-ray mask