Materials & Process Integration for MEMS

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Francis E. H. Tay
Springer Science & Business Media, Aug 31, 2002 - Technology & Engineering - 299 pages
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The field of materials and process integration for MEMS research has an extensive past as well as a long and promising future. Researchers, academicians and engineers from around the world are increasingly devoting their efforts on the materials and process integration issues and opportunities in MEMS devices. These efforts are crucial to sustain the long-term growth of the MEMS field. The commercial MEMS community is heavily driven by the push for profitable and sustainable products. In the course of establishing high volume and low-cost production processes, the critical importance of materials properties, behaviors, reliability, reproducibility, and predictability, as well as process integration of compatible materials systems become apparent. Although standard IC fabrication steps, particularly lithographic techniques, are leveraged heavily in the creation of MEMS devices, additional customized and novel micromachining techniques are needed to develop sophisticated MEMS structures. One of the most common techniques is bulk micromachining, by which micromechanical structures are created by etching into the bulk of the substrates with either anisotropic etching with strong alk:ali solution or deep reactive-ion etching (DRIB). The second common technique is surface micromachining, by which planar microstructures are created by sequential deposition and etching of thin films on the surface of the substrate, followed by a fmal removal of sacrificial layers to release suspended structures. Other techniques include deep lithography and plating to create metal structures with high aspect ratios (LIGA), micro electrodischarge machining (J.

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Integration of Piezoelectric Pb ZrₓTi₁ₓO₃ PZT Thin Films into Micromachined Sensors and Actuators
Porous Silicon as a Sacrifical Layer in Production of Silicon Diaphragms by Precision Grinding
GaAs Cantilever and Bridge MembraneLike Structures Fully Compatible with AlGaAsInGaAsGaAs and InGaPInGaAsGaAs Based HFETs
Magnetron Sputtered TiNiCu Shape Memory Alloy Thin Film for MEMS Applications
Chemically Amplified Resist for Micromachining using XRay Lithography
SelfAssembled Monolayers SAM for Tunneling Sensors
Oxidation ProcessOptimization for Large Area Silicon Fusion Bonded Devices and MEMS Structures
Silicon Nanomachining by Scanning Probe Lithography and Anisotropic Wet Etching
A Novel Bulk Micromachining Method in Gallium Arsenide
Deep XRay Lithography for MEMSPhotoelectron Exposure of the Upper and Bottom Resist Layers
Spray Coating Technology of PhotoresistPolymer for 3D Patterning and Interconnect
Uncooled Infrared Image Sensor of Dielectric Bolometer Mode using Ferroelectric BST Thin Film Prepared by Metal Organic Decomposition
Tactical Grade MEMS Gryroscopes Fabricated by the SBM Process
Plasma Etching Techniques to Form HighAspectRatio MEMS Structures

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