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12 measurements analysis annealed bonds ASTM attenuator bulk silicon wafers Channel Electron Multipliers chem-mechanically polished circuit conversion loss defects detector determined diodes Electronic emitter-base junction emitter-only switching technique energy levels epitaxial Fast Neutrons forbidden energy gap four-probe method ft*cm Germanium gold acceptor gold diffusion Gold-Doped Silicon heating power pulse infrared measurements infrared microradiometer interlaboratory IRR measurements JEDEC junction temperature junction-to-case temperature difference Leedy loop height measurement of thermal methods of measurement n-type NBS Cost Center NBS Tech Note obtained Output ports p-n Junctions Photoconductivity Phys.-Solid probe force Process Control pull strength Radiation reported S-parameters sample standard deviation scattering parameter Section semiconductor devices Semiconductor Materials specimens Standardization Activities steady-state thermal response Subcommittee substrates surements surface condition Surface Photovoltage technical Technology thermal resistance thermal response measurements thermally stimulated transient thermal response transistor operating mode Transistor socket Transistor unannealed valence band variability voltage decay wire bonds