Introduction to Microlithography: Theory, Materials, and ProcessingGood,No Highlights,No Markup,all pages are intact, Slight Shelfwear,may have the corners slightly dented, may have slight color changes/slightly damaged spine. |
Contents
Organic Resist MaterialsTheory and Chemistry | 87 |
Resist Processing | 161 |
Plasma Etching | 215 |
Copyright | |
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absorbed anisotropic anisotropic etching atomic backscatter baking beam resist chemical contamination defects density devices diffraction dose dry etching e-beam effect Electrochem electron beam electron beam lithography emission end point energy etch process etch rate etchant exposed exposure film thickness fluorine function Ge-Se glow discharge imaging layer integrated circuit ion beam isotropic lens linewidth control lithographic mask MLR systems molecular weight negative resist novolac numerical aperture optical oxide parameters pattern permission from Ref photolithography photoresist Phys pinhole planarizing layer plasma etching PMMA poly polymer polymeric positive resist prebaking processing steps produce radiation reactions reactive Reproduced with permission resist film resist image resist materials resist systems resist thickness resolution RIE PCM system scanning scattering shown in Figure silicon SiO2 Solid State Technol solvent species spin coating substrate surface techniques temperature tion two-layer wafer wavelength wet etch x-ray