Physics of Semiconductor Devices

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John Wiley & Sons, Nov 3, 2006 - Technology & Engineering - 832 pages
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The Third Edition of the standard textbook and reference in thefield of semiconductor devices

This classic book has set the standard for advanced study andreference in the semiconductor device field. Now completely updatedand reorganized to reflect the tremendous advances in deviceconcepts and performance, this Third Edition remains the mostdetailed and exhaustive single source of information on the mostimportant semiconductor devices. It gives readers immediate accessto detailed descriptions of the underlying physics and performancecharacteristics of all major bipolar, field-effect, microwave,photonic, and sensor devices.

Designed for graduate textbook adoptions and reference needs,this new edition includes:

  • A complete update of the latest developments
  • New devices such as three-dimensional MOSFETs, MODFETs,resonant-tunneling diodes, semiconductor sensors, quantum-cascadelasers, single-electron transistors, real-space transfer devices,and more
  • Materials completely reorganized
  • Problem sets at the end of each chapter
  • All figures reproduced at the highest quality

Physics of Semiconductor Devices, Third Edition offersengineers, research scientists, faculty, and students a practicalbasis for understanding the most important devices in use today andfor evaluating future device performance and limitations.

 A Solutions Manual is available from the editorialdepartment.

 

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Contents

Part II Device Building Blocks
77
Part III Transistors
241
Part IV NegativeResistance and Power Devices
415
Part V Photonic Devices and Sensors
599
Appendixes
773
Index
793
Copyright

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Page 17 - A" is the Richardson's constant for (Ga. Mn)N, T is the absolute measurement temperature and k is Boltzmann's constant. This can also be written in the form COVERT -il/2 where NC is the effective density of states in the conduction band...

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About the author (2006)

S. M. Sze received his PhD in electrical engineering fromStanford University. He was with Bell Telephone Laboratories from1963–1989, joining the faculty of the Department ofElectronics Engineering, National Chiao Tung University (NCTU) in1990. Dr. Sze is currently Distinguished Chair Professor of NCTUand has served as a visiting professor to many academicinstitutions. He has made fundamental and pioneering contributionsto semiconductor devices; of particular importance is hiscoinvention of nonvolatile semiconductor memory such as flashmemory and EEPROM. Dr. Sze has authored, coauthored, or edited over200 technical papers and twelve books. His book Physics ofSemiconductor Devices (Wiley) is one of the most cited works incontemporary engineering and applied science publications (over15,000 citations from ISI Press). Dr. Sze is the recipient ofnumerous awards and holds such titles as Life Fellow of the IEEE,Academician of the Academia Sinica, and member of the US NationalAcademy of Engineering.

Kwok K. Ng received his PhD from Columbia University in1979 and BS from Rutgers University in 1975, both in electricalengineering. He joined Bell Laboratories of AT&T in MurrayHill, New Jersey, in 1980, which spun off as part of LucentTechnologies in 1996. He became affiliated with Agere Systems inAllentown, Pennsylvania, as the microelectronics unit becameindependent in 2001. He has been with MVC in San Jose, California,since 2005. Dr. Ng has also held positions as editor of IEEEElectron Device Letters and liaison to IEEE Press. He is the authorof the Complete Guide to Semiconductor Devices, Second Edition(Wiley).

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