Hydrogen in Compound SemiconductorsState-of-the-art reviews on all the major areas of interest are brought together in this book, namely the role of hydrogen during epitaxial growth, its entry into the material during processing, its subsequent diffusivity and bonding with dopants, other impurities or defects, its effect on device performance and reliability and positive uses for hydrogen in passivating surfaces. |
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Contents
The Role of Hydrogen in UHV Growth of IIIV Semiconductors | 3 |
The Role of Hydrogen in the Growth of IIIV Compound | 27 |
Role of Hydrogen in Semiconductor Dielectric and Metal Deposition | 61 |
Copyright | |
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Common terms and phrases
absorption acceptor activation AlGaAs ambient annealing Appl atom band bond calculated carbon carrier centers changes charge complexes compounds concentration cooling crystal damage decrease deep defects density dependence deposition depth deuterium device diffusion diodes direct dissociation donor dopant doped effect efficiency electrical electron energy epitaxial etching experiments exposure Figure formation frequency function GaAs grown growth higher hydrogen hydrogen passivation hydrogen plasma III-V implantation incorporation increase indicated intensity layer Lett lower material measurements mode neutral observed obtained occur p-type pairs passivation Pearton performed Phys plasma position present pressure produced profiles properties range reduced region relative removed reported resistivity samples semiconductors shallow shown in Figure shows similar SIMS species spectra stability structure studies substrate surface technique temperature thermal traps treatment vibrational
Bibliographic information
| Title | Hydrogen in Compound Semiconductors Volume 148, Issue 9 of Materials Science Forum Vols. 148-149 Series Materials science forum |
| Editor | S. J. Pearton |
| Edition | illustrated |
| Publisher | Trans Tech Publications, 1994 |
| Original from | the University of Michigan |
| Digitized | Dec 15, 2007 |
| ISBN | 0878496726, 9780878496723 |
| Length | 535 pages |
| Export Citation | BiBTeX EndNote RefMan |