Progress in SOI Structures and Devices Operating at Extreme Conditions

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Francis Balestra, Alexei Nazarov, Vladimir S. Lysenko
Springer Science & Business Media, Apr 30, 2002 - Technology & Engineering - 351 pages
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A review of the electrical properties, performance and physical mechanisms of the main silicon-on-insulator (SOI) materials and devices. Particular attention is paid to the reliability of SOI structures operating in harsh conditions. The first part of the book deals with material technology and describes the SIMOX and ELTRAN technologies, the smart-cut technique, SiCOI structures and MBE growth. The second part covers reliability of devices operating under extreme conditions, with an examination of low and high temperature operation of deep submicron MOSFETs and novel SOI technologies and circuits, SOI in harsh environments and the properties of the buried oxide. The third part deals with the characterization of advanced SOI materials and devices, covering laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI devices produced by a variety of techniques. The last part reviews future prospects for SOI structures, analyzing wafer bonding techniques, applications of oxidized porous silicon, semi-insulating silicon materials, self-organization of silicon dots and wires on SOI and some new physical phenomena.
 

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Contents

Perspectives of SIMOX technology
1
MBE growth of the top layer in SiYSZSi
11
SiCOI structure Technology and characterization
17
New SiC on instalator wafers based on the Smartcut approach and their potential applications
31
ELTRANSOIEpi Wafer Technology
39
Low dimension properties of nanostructures on ultra thin layers of silicon formed by oxidation of ion cut SOI wafers electron lithography
87
SOI for Harsh Environment Applications in the USA
93
Performance and reliability of deep submicron SOI MOSFETs in a wide temperature range
105
Similarity relation for IV characteristics of FETs with different channel shape
229
Laserrecrystallized SOI layers for sensor applications at cryogenic temperatures
233
Characterization and modeling of advanced SOI materials and devices
239
Modeling and measurements of generation and recombination currents in thinfilm SOI gated diodes
249
Defect creation mechanisms due to hotcarriers in 015𝞵m SIMOX MOSFETs
263
Defects and their electronic properties in highpressureannealed SOI structures sliced by hydrogen
269
DC and AC models of partiallydepleted SOI MOSFETs in weak inversion
289
On scaling the thin film Si thickness of SOI substrates A Perspective on Wafer Bonding for Thin Film Devices
299

a Western European Perspective
129
Charge carrier injection and trapping in the buried oxides of SOI structures
139
Cryogenic investigations of SIMOX buried oxide parameters
159
GateAllAround Technology for Harsh Environment Applications
167
LowNoise High Temperature SOI Analog Circuits
189
Influence of 𝛾radiation on short channel SOIMOSFETs with thin SiO₂ films
211
Radiation effects in SOI magnetic sensitive elements under different radiation conditions
221
untapped resources
309
Electronhole pair reversed drift in SOI structure
329
A novel depleted semiinsulating silicon material for high frequency applications
333
Selforganizing growth of silicon dot and wirelike microcrystals on isolated substrates
343
Author Index
349
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