Semiconductor Silicon 1994: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology
Howard R. Huff, Werner Bergholz, Koji Sumino
The Electrochemical Society, 1994 - Semiconductors - 1218 pages
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active annealing Appl applied atoms band bonded bulk calculated carrier cluster coefficient compared concentration contamination contrast cooling crucible crystal crystal growth decrease defects density dependence deposition depth determined device diffusion discussed dislocation distribution dopant doped effect efficiency electrical electron energy erbium etching experimental experiments field Figure formation formed function gate gettering grown growth heat higher hydrogen important impurities increase indicates initial integrated intensity interface interstitial layer light lithography lower material measured mechanism melt metal method nucleation observed obtained optical oxide oxygen precipitation performed Phys polysilicon porous present profiles properties range recombination reduced region reported respectively sample shown shows silicon simulation single solid solution stacking faults step structure substrate surface techniques temperature thermal thickness treatment values wafer yield
Page 517 - This work was supported in part by a Grant-in-Aid from the Ministry of Education, Science, and Culture of Japan to Prof.
Page 486 - Department of Materials Science and Engineering Massachusetts Institute of Technology, Cambridge, MA 02139, USA...
Page 37 - The great progress in semiconductor electronics can be traced to a unique combination of basic conceptual advances, the perfection of new materials and the development of new device principles. Ever since the invention of the transistor, we have witnessed a fantastic growth in silicon technology, leading to more complex functions and higher densities of devices such as the mega bit memories.
Page 510 - ACKNOWLEDGMENTS This work was supported by grants from Rochester Gas & Electric, the New York State Energy Research & Development Authority, the National Science Foundation Center for Photo-Induced Charge Transfer and Xerox.
Page 574 - JC Vial, A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, F. Muller, R. Romestain and RM Macfarlane, Phys. Rev., B 45, 14171 (1992).
Page 511 - Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan ABSTRACT Some optoelectronic effects in porous Si (PS) have been investigated in relation to the visible luminescence mechanism.
Page 370 - Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695.
Page 478 - The insert of figure 12 shows that there is a linear dependence between the applied voltage cut-off variation and the luminescence energy. Furthermore, the PL quenching which is obtained for a bias variation of only about 500 mV is found to be completely reversible during the reverse scan (-1.8V...