Thermoelectricity: Science and Engineering |
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Page 27
... bands are completely filled and the higher bands are empty . The highest filled band is called the valence band and the lowest empty band is called the conduction band . In insulators the energy gap between the upper edge of the valence ...
... bands are completely filled and the higher bands are empty . The highest filled band is called the valence band and the lowest empty band is called the conduction band . In insulators the energy gap between the upper edge of the valence ...
Page 31
... conduction band . The charge transported by a hole moving in a given direction is the same as the charge transported by an electron moving in the opposite direction ; thus the hole transports positive charge . It can be shown that its ...
... conduction band . The charge transported by a hole moving in a given direction is the same as the charge transported by an electron moving in the opposite direction ; thus the hole transports positive charge . It can be shown that its ...
Page 32
... valence band by adding acceptors . An acceptor level is electrically uncharged when it is not occupied by an electron , while a donor level is uncharged when it has one electron on it . Vacancies and other defects in the crystal also ...
... valence band by adding acceptors . An acceptor level is electrically uncharged when it is not occupied by an electron , while a donor level is uncharged when it has one electron on it . Vacancies and other defects in the crystal also ...
Contents
Introduction By R R Heikes and R W Ure | 1 |
Classical and Irreversible Thermodynamic Treatment of Ther | 7 |
Theoretical Calculation of Device Performance By R W Ure | 15 |
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addition alloy applied approximately assumed atoms band calculated carrier Chapter charge composition compounds concentration considered constant couple crystal decrease defects density dependence determined device difference diffusion direction discussed distribution doping effect efficiency electrical electrons elements energy equal equation example figure of merit flow function give given gradient growth heat hole important impurity increase interface ions larger lattice limit liquid materials maximum measured mechanism melting metal method mobility mode n-type obtained occur parameter performance phase phonon Phys position possible potential present produced properties range reason reduced reference region relation resistance result sample scattering Seebeck coefficient semiconductors shown in Fig shows single solid solute specimen structure surface temperature term theory thermal conductivity thermocouple thermoelectric thermoelectric materials tion unit usually vacancies valence