Thermoelectricity: Science and Engineering |
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Page 195
... interface , AT is the under- cooling of the interface below the equilibrium temperature , and the at are approximately constants . For a supercooling of 1 ° C at the interface , v1 , v2 , and v3 would be about 1 cm / sec , 10-4 cm / sec ...
... interface , AT is the under- cooling of the interface below the equilibrium temperature , and the at are approximately constants . For a supercooling of 1 ° C at the interface , v1 , v2 , and v3 would be about 1 cm / sec , 10-4 cm / sec ...
Page 200
... interface morphologies . The consequence of the cellular interface morphology that con- cerns us here is the chemical imperfection of the lattice created by crystal growth with this interface morphology . The boundaries ( hexagonal ...
... interface morphologies . The consequence of the cellular interface morphology that con- cerns us here is the chemical imperfection of the lattice created by crystal growth with this interface morphology . The boundaries ( hexagonal ...
Page 212
... interface ad- vances . If the solute is a volatile one and build - up is allowed to occur at the interface , it is likely that the vapor pressure of the solute at the interface is considerably greater than its vapor pressure over the ...
... interface ad- vances . If the solute is a volatile one and build - up is allowed to occur at the interface , it is likely that the vapor pressure of the solute at the interface is considerably greater than its vapor pressure over the ...
Contents
Introduction By R R Heikes and R W Ure | 1 |
Classical and Irreversible Thermodynamic Treatment of Ther | 7 |
Theoretical Calculation of Device Performance By R W Ure | 15 |
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addition alloy applied approximately assumed atoms band calculated carrier Chapter charge composition compounds concentration considered constant couple crystal decrease defects density dependence determined device difference diffusion direction discussed distribution doping effect efficiency electrical electrons elements energy equal equation example figure of merit flow function give given gradient growth heat hole important impurity increase interface ions larger lattice limit liquid materials maximum measured mechanism melting metal method mobility mode n-type obtained occur parameter performance phase phonon Phys position possible potential present produced properties range reason reduced reference region relation resistance result sample scattering Seebeck coefficient semiconductors shown in Fig shows single solid solute specimen structure surface temperature term theory thermal conductivity thermocouple thermoelectric thermoelectric materials tion unit usually vacancies valence