Thermoelectricity: Science and Engineering |
Contents
Introduction By R R Heikes and R W Ure | 1 |
Classical and Irreversible Thermodynamic Treatment of Ther | 7 |
Theoretical Calculation of Device Performance By R W Ure | 15 |
Copyright | |
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addition alloy applied approximately assumed atoms band calculated carrier Chapter charge composition compounds concentration considered constant couple crystal decrease defects density dependence determined device difference diffusion direction discussed distribution doping effect efficiency electrical electrons elements energy equal equation example figure of merit flow function give given gradient growth heat hole important impurity increase interface ions larger lattice limit liquid materials maximum measured mechanism melting metal method mobility mode n-type obtained occur parameter performance phase phonon Phys position possible potential present produced properties range reason reduced reference region relation resistance result sample scattering Seebeck coefficient semiconductors shown in Fig shows single solid solute specimen structure surface temperature term theory thermal conductivity thermocouple thermoelectric thermoelectric materials tion unit usually vacancies valence