Thermoelectricity: Science and Engineering |
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Page 176
... gradient of the component will depend on the relative signs and magnitudes of Q * and ea as well as the gradients of potential and temperature . Several special cases can be mentioned . ( 1 ) The temperature gradient term may be much ...
... gradient of the component will depend on the relative signs and magnitudes of Q * and ea as well as the gradients of potential and temperature . Several special cases can be mentioned . ( 1 ) The temperature gradient term may be much ...
Page 311
... temperature distribution within the materials and depends only on the temperature at the junctions . There have been many attempts to show experimentally that the Seebeck emf depends on the distribution of the temperature gradient in ...
... temperature distribution within the materials and depends only on the temperature at the junctions . There have been many attempts to show experimentally that the Seebeck emf depends on the distribution of the temperature gradient in ...
Page 462
... temperature gradient , but is a consequence of the fact that the temperature distribution , Eq . ( 15.5 ) , has two independent terms . The Joule heat flows down its own temperature gradient ( shown . short - dashed in Fig . 15.3 ) and ...
... temperature gradient , but is a consequence of the fact that the temperature distribution , Eq . ( 15.5 ) , has two independent terms . The Joule heat flows down its own temperature gradient ( shown . short - dashed in Fig . 15.3 ) and ...
Contents
Introduction By R R Heikes and R W Ure | 1 |
Classical and Irreversible Thermodynamic Treatment of Ther | 7 |
Theoretical Calculation of Device Performance By R W Ure | 15 |
Copyright | |
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addition alloy applied approximately assumed atoms band calculated carrier Chapter charge composition compounds concentration considered constant couple crystal decrease defects density dependence determined device difference diffusion direction discussed distribution doping effect efficiency electrical electrons elements energy equal equation example figure of merit flow function give given gradient growth heat hole important impurity increase interface ions larger lattice limit liquid materials maximum measured mechanism melting metal method mobility mode n-type obtained occur parameter performance phase phonon Phys position possible potential present produced properties range reason reduced reference region relation resistance result sample scattering Seebeck coefficient semiconductors shown in Fig shows single solid solute specimen structure surface temperature term theory thermal conductivity thermocouple thermoelectric thermoelectric materials tion unit usually vacancies valence