Polycrystalline metal and magnetic thin films-- 2000: symposium held April 25-27, 2000, San Francisco, California, U.S.A.
Bruce M. Clemens
Materials Research Society, 2001 - Science - 189 pages
The unprecedented growth in the semiconductor, electronics, and storage industries is the result of continued miniaturization of circuit devices, increases in chip functionality, and increased storage capacity and performance, along with a decrease in per-function cost. Hardware shrinkage has taken place leading to similar decreases in the dimensions of interconnection wires, contact metallization, and magnetic storage footprints. The important role of surfaces, interfaces, defects, and impurities has raised serious materials questions about how to control the properties of polycrystalline thin films used in applications requiring tight performance tolerances and the understanding of these, during the evolution of various film properties with time and temperature, is critical to the successful design and development of smaller devices. This book focuses on the directions taken to understand and control the properties of polycrystalline materials. Topics include: magnetic thin films and structures; polycrystalline metal films - microstructure and grain evolution and stress and mechanical properties of thin films.
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TEM to Support Magnetic Media Development in YR2000 G1 3 F3 3
Grain Size Relationships Between the Magnetic Layer and
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2000 Materials Research alloy angle anisotropy annealing Appl atomic average beam buffer layer crystal Cu-Al curvature measurements decrease dependence effect elastic elastic modulus electromigration electron energy EP Cu films epitaxial evolution experimental FePd FIB image field film thickness function gold films grain boundary grain size grown growth HRTEM in-plane in-situ incidence increase interconnect interface ISBN lattice parameter layer thickness magnetic layer Materials Research Society MECC mechanical microstructure modulus multilayer NiAl NiFe nm thick nucleation obliquely deposited observed ordered domains orientation oxidation peak perpendicular phase Phys plane polycrystalline Proc Raman spectroscopy recrystallization RHEED room temperature sample scan sheet resistance shown in Figure shows silicide silicon simulated specular spin valve sputtered stack strain strain tensor stress structure substrate superlattice surface Symp techniques tensile stress texture thin films titanium underlayer grain values Volume wafer width X-ray diffraction