What people are saying - Write a review
We haven't found any reviews in the usual places.
CONDUCTION BAND ENGINEERING
DESIGN AND FABRICATION OF VERTICAL FETS
CONCLUSIONS AND SUGGESTIONS
2 other sections not shown
active area AlGaAs AlGaAs/GaAs average electron velocity ballistic transport band gap bias barrier height channel doping channel undercut etch characteristic at 300°K chlorobenzene cm/sec conduction band diagram cross section device device performance device structure drain pad Epilayer structure fabrication field-effect transistor GaAs gate deposition gate length gate pad gate placement gate width graded heterojunction launcher heteroj unction Heterojunction Bipolar Transistors heterojunction dipole launcher heterojunction launcher device implant injection energy intrinsic transconductance Jsat launcher structures launcher-containing devices lithography micrograph mole fraction mS/mm n-type n+-layer ohmic contact parasitic channel PDB launcher planar-doped barrier launcher plasma ash room temperature saturation current density Schematic semilog scale series resistance sheet charge density shown in Figure source and drain source bar source pad source resistance Source-drain I-V characteristic source-drain spacing thermionic emission transconductance Transistor I-V characteristic typical vertical FET vertical MESFET voltage wafer wet chemical etch wide-source cross section zero bias barrier