The Effects of Hot-electron Injection Cathodes on the Performance of Gallium Arsenide Vertical Field-effect Transistors |
Contents
INTRODUCTION 1 | 9 |
CONDUCTION BAND ENGINEERING | 19 |
DESIGN AND FABRICATION OF VERTICAL FETS | 62 |
Copyright | |
3 other sections not shown
Common terms and phrases
active area AlGaAs AlGaAs/GaAs AlxGa1-xAs average electron velocity ballistic transport band gap bias barrier height channel doping channel undercut etch characteristic at 300°K chlorobenzene cm/sec conduction band diagram conventional cross section cross section device device performance device structure drain resistances Epilayer structure extrinsic transconductance fabrication FET's field-effect transistor GaAs gate deposition gate length gate placement gate-source spacing graded heterojunction launcher heterojunction dipole launcher heterojunction launcher device hot-electron injection cathode implant increase injection energy intrinsic Jsat launcher-containing devices lithography mesa micrograph Mishra mole fraction mS/mm n-type n+-layer ohmic contact parasitic channel PDB launcher planar planar-doped barrier launcher plasma ash region saturation current density Schematic series resistance shown in Figure sidewalls source and drain source bar source cross section source pad source resistance Source-drain I-V characteristic thermionic emission Transistor I-V characteristic vertical FET vertical MESFET wafer wet chemical etch wide-source cross section zero bias barrier