Laser and Electron-beam Interactions with Solids: Proceedings of the Materials Research Society Annual Meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A.
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FUNDAMENTALS OF ENERGY TRANSFER DURING PICOSECOND
SYNCHROTRON XRAY STUDY OF THE STRUCTURE OF SILICON DURING
SILICON MELTS DURING PULSED RUBY LASER ANNEALING
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absorption activation alloys amorphous Appl atoms boundaries calculations carrier channeling compared concentration crystal crystalline damage defects dependence deposited depth determined device diffusion discussed dislocation dopant doping dose effect electrical electron beam energy density epitaxial experimental experiments Figure films formed function furnace GaAs grain grain boundaries growth heat higher implanted increase indicate induced intensity INTERACTIONS interface irradiation laser annealing laser irradiation laser pulse lattice layer Lett light limit liquid lower material measurements melting observed obtained occurs optical oxide pattern phase Phys present produced Publishing pulse pulsed laser range recrystallized REFERENCES reflectivity region regrowth reported resistance ruby sample scan semiconductor shown shows silicon single crystal solid spectra structure studies substrate surface technique temperature thermal thickness thin threshold wafer zone