Laser and Electron-beam Interactions with Solids: Proceedings of the Materials Research Society Annual Meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A. |
Contents
FUNDAMENTALS OF ENERGY TRANSFER DURING PICOSECOND | 3 |
SYNCHROTRON XRAY STUDY OF THE STRUCTURE OF SILICON DURING | 13 |
SILICON MELTS DURING PULSED RUBY LASER ANNEALING | 23 |
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1982 by Elsevier absorption alloys amorphous layer Appl Appleton and G.K. boron calculations cm/sec coefficient crystalline cw laser defects deposited device diffusion dislocation dopant doping dose e-beam electron beam ELECTRON-BEAM INTERACTIONS Elsevier Science Publishing energy density epitaxial experimental Figure films function furnace annealing G.K. Celler GaAs grain growth heat impurity increase INTERACTIONS WITH SOLIDS interface ion implantation J. F. Gibbons J/cm² Laser and Electron LASER AND ELECTRON-BEAM laser annealing laser beam laser energy laser irradiation laser power laser processing laser pulse lattice Lett liquid measurements micrograph MOSFETs n-type nsec observed obtained optical oxide p-n junctions phonon Phys poly-Si polysilicon pulsed laser annealing Q-switched quenching recrystallized reflectivity region regrowth ruby laser Rutherford backscattering sample scan speed Science Publishing Company semiconductor sheet resistance shown in Fig shows silicon single crystal SiO2 SOLIDS B.R. Appleton spectra structure substrate surface technique temperature thickness threshold velocity wafer