Semiconducting and Insulating Materials 1996: Proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC'9), April 29/May 3, 1996, Toulouse, France |
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Contents
Iron doped semiinsulating GaInP latttice matched to GaAs for device fabrication | 13 |
Characterization of conduction in LTGGaAs | 27 |
Ultrafast carrier trapping and high resistivity of MeV energy ion implanted GaAs | 41 |
Copyright | |
24 other sections not shown
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Common terms and phrases
activation alloy annealing Appl applied arsenic atoms band beam bias bulk calculated carbon carrier characteristics charge cluster compared complexes concentration conduction constant corresponding crystals curves decreases deep defects density dependence deposition determined device diffusion diodes discussed dislocation donor doping effect electric field electron emission energy epitaxial excitation experimental Figure formed frequency function GaAs grown growth higher hole implanted increase indicates influence intensity interface laser lattice layers Lett lifetime lower material measurements mechanism method noise observed obtained optical parameters peak performed photon Phys position present pressure profiles properties pulse range ratio References region reported resistivity respectively samples Schottky semi-insulating semiconductor shown shows spectra spectrum strain structure substrate surface technique temperature thermal thickness traps undoped voltage wafers
Bibliographic information
| Title | Semiconducting and Insulating Materials 1996: Proceedings of the 9th Conference on Semiconducting and Insulating Materials (SIMC'9), April 29/May 3, 1996, Toulouse, France |
| Editor | Chantal Fontaine |
| Contributor | Institute of Electrical and Electronics Engineers |
| Publisher | IEEE, 1996 |
| Original from | the University of Michigan |
| Digitized | Jan 15, 2008 |
| ISBN | 0780331796, 9780780331792 |
| Length | 379 pages |
| Subjects | › Technology & Engineering / Electrical |
| Export Citation | BiBTeX EndNote RefMan |