Principles of Growth and Processing of Semiconductors
A senior/graduate text on the growth and processing of semiconductor materials (semiconductor fabrication) that will expose material/electrical and chemical engineering majors to the principles underlying the fabrication of state-of-the-art integrated circuits and their applications.
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Principles of Semiconducting Devices
9 other sections not shown
annealing Appl Assuming atoms band gap beam behavior bias bond Burgers vector calculate carrier concentration Chapter composition compound semiconductors conduction band crystal density depletion region deposition device diamond-cubic diffusion coefficient diodes discussed in section dislocation donor dopant dopant atoms doped edge EHPs electric field electromigration electrons epitaxial layers Equation equilibrium example Fermi film formation GaAs given growth rate holes III-V impurities interface interstitials ion implantation lattice layers grown lithography loops Mahajan mask material melt metal micrograph misfit MOSFETs n-type observed occurs ohmic contacts orientation oxide oxygen p-n junction p-type semiconductor Phys pits planes plasma point defects potential precipitates produce reaction recombination resist resulting Schematic Schottky shown in Figure shows silicon silicon dioxide SiO2 situation solid solution species sputtering stacking faults substrate surface technique thermal thickness tion transistor vacancies valence band vapor voltage wafer X-ray