Principles of Growth and Processing of SemiconductorsA senior/graduate text on the growth and processing of semiconductor materials (semiconductor fabrication) that will expose material/electrical and chemical engineering majors to the principles underlying the fabrication of state-of-the-art integrated circuits and their applications. |
Contents
An Introduction | 1 |
Principles of Semiconducting Devices | 2 |
5 | 22 |
Copyright | |
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Common terms and phrases
active addition annealing Assuming atoms band beam behavior bond boundary calculate carrier Chapter charge coefficient composition concentration consider constant crystal defects density depends deposition develop device diffusion direction discussed dislocation distribution dopant doped edge effect electric electrons energy epitaxial Equation equilibrium etching example faults field formation GaAs given grain grain boundaries grow grown growth higher holes illustrating implanted impurities increases interface interstitials ions junction lattice layer levels lithography loops lower material mechanism melt metal n-type observed obtain occurs orientation oxide oxygen pattern phase Phys pits planes point defects positive potential pressure produce range reaction reduced referred region resist respectively resulting Schematic semiconductor separation shown in Figure shows silicon situation solid solution species step structure substrate surface technique temperature thermal thickness tion vacancies values various voltage wafer whereas