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Digital Alloys of AlNAlGaN for Deep UV Light Emitting Diodes 7221 Sergey A NIKISHIN Mark HOLTZ and Henryk
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2005 The Japan absorption AC transport current AlGaN AlInGaN angle annealing Appl Applied Physics atoms band gap barrier beam calculated cell configuration crystal current density curve decrease deposited device diffraction diffusion diodes dislocations doping effect efficiency electron emission energy etch-byproduct etching exciton experimental fabricated FDTD fiber Figure films function GaAs GaAsN grown growth heat flux IEEE increase InGaAs input interface irradiation Japan Society laser laser diodes LEDs Lett light light-emitting diodes magnetic measured MEEF mode moth-eye structure nitride observed obtained October 11 optical gain optical power output oxygen p-type parameters particles PAT6 peak phase photocurrent Photonics Phys polarization polymer published October 11 pulse pump quantum r-plane ratio region resistance respectively sample sapphire semiconductor shown in Fig shows signal silicon Society of Applied solar cells spectra spectrum substrate surface temperature thermal thickness voltage wafer wavelength