## Synthesis of broadband distributed interstage matching networks for 1 [mu (romanized form)] - and 1/2 [mu (romanized form)]-gate GaAs MESFET amplifiers |

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0.5 dB gain amplifier design Amplifier with 2-8-2 Avantek l/2u Avantek l/2y FET Bandwidth broadband characteristic impedance Constraint for Input Constraint for Interstage curve pairs dB CASE e(dB dB e(dB dB gain reduction dB ripple dB/oct gain slope dB/octave DISTRIBUTED EQUIRIPPLE MATCHING Distributed Model Double Stage Amplifier ELEMENT VALUES F0R equiripple error gain EQUIRIPPLE MATCHING NETW0RKS F(GHz F0R DISTRIBUTED EQUIRIPPLE FET model FET's field effect transistor GaAs FET amplifier gain roll-off Gain Slope Distribution Gain-Bandwidth Constraint gain-bandwidth limitations Gain(dB high-pass HP lu FET HP ly impedance ratio impedance transformation ratio initial design input and output input matching network interstage matching network low-pass MAG and Gu minimum phase Model of FET NETW0RKS N output matching network output model reactive element absorption reflection coefficient right half X-plane S-parameters shown in Figure Single Stage Amplifier Sjj(X Smith Chart VALUES F0R DISTRIBUTED VSWR zero gain reduction zoi Z02