The Variability of Some Characteristics of a Group of Fused-junction Transistors |
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75 transistors approximation assumption b₁ base region base width bypass circuit calculated lifetime cm usec collector junction treated collector voltage computed cutoff frequency diffusion constant diffusion equation diffusion length Dimensionless units Earlyı and Zawels2 empirical relations final group frequency f fused-junction transistors group of 75 GROUP OF FUSED-JUNCTION group of transistors h parameters Ie aw avc independent intrinsic hole density intrinsic transistor K₁ and K₂ leakage lifetime in tenths linear function lot of transistors measured with emitter Measurement that varies microsecond minority carrier lifetime Motorola ohms one-dimensional transistor pad was added partial derivative relation between K₂ significant departures STANFORD UNIVERSITY substituting surface recombination Test Set Type theoretical relations three db pad transistor to transistor transistor with surface transistors actually measured true value uamp umhos vacuum tube value of 150 values of K₂ variable varies erratically µsec Кз кт Уа հշշ ᏀᎾ 머그