Proceedings of the ... International Symposium on Semiconductor Wafer Bonding: Science, Technology, and ApplicationsElectrochemical Society, 1991 - Semiconductor wafers |
Contents
| 18 | |
| 33 | |
| 48 | |
| 65 | |
| 82 | |
| 102 | |
| 123 | |
| 146 | |
| 260 | |
| 271 | |
| 287 | |
| 295 | |
| 311 | |
| 321 | |
| 331 | |
| 339 | |
| 153 | |
| 165 | |
| 174 | |
| 180 | |
| 190 | |
| 200 | |
| 211 | |
| 221 | |
| 230 | |
| 239 | |
| 249 | |
| 349 | |
| 355 | |
| 365 | |
| 375 | |
| 397 | |
| 414 | |
| 427 | |
| 443 | |
| 474 | |
| 487 | |
Other editions - View all
Common terms and phrases
adhesion annealing temperature anodic Appl applied BESOI bond energy bonded wafers bonding interface bonding process bonding strength boron BPSG BPSOI breakdown voltage bulk buried oxide C-V curves capacitors carrier cavity concentration contamination defect density deposited device layer dielectric isolation diffusion dislocations doped effect electrical Electrochem electron emitter epitaxial etch etch stop layer etch-stop fabrication forces function GaAs gate handle wafer high temperature hydrophilic hydrophobic IEEE implantation increase injection Maszara material measured mechanical micro void molecules MOSFET n-type negative charge nitrogen obtained oxide layer oxide thickness oxygen p-n junction particles peak Phys plastic deformation polishing potential pressure RCA clean region room temperature samples semiconductor shown in Figure shows silica silicon wafers silicon-on-insulator SIMOX simulation SiO2 solution strain stress structure substrate surface energy technique thermal oxide thin films transistor treatment wafer pair wafer surface warpage
Popular passages
Page 47 - Indeed, such films exhibit yield-points before they begin to flow. They can therefore sustain a finite shear stress, in addition to a finite normal stress. The value of the yield stress depends on the number of layers comprising the film and represents another "quantized" property of molecularly thin films [5-9].
Page 46 - To summarize, for there to be an oscillatory solvation force, the liquid molecules must be able to be correlated over a reasonably long range. This requires that both the liquid molecules and the surfaces have a high degree of order or symmetry. If either is missing, so will the oscillations. A roughness of only a few tenths of a nanometer is often sufficient to eliminate any oscillatory component of the force law.
Page 48 - These are listed in table 1 , together with the type of sliding observed, the friction coefficient, and the bulk viscosity of the liquids (given for reference purposes). From the data of table 1 (top part) it appears that there is a direct correlation between the shapes of molecules and their coefficient of friction. Small spherical or chain molecules have high friction with stick-slip because they can pack into ordered solidlike layers, whereas longer chained and branched molecules give low friction...
Page 47 - Both experiments [27,39,40] and theory [41,42] indicate that even when two surfaces are in steady state sliding they still prefer to remain in one of their stable potential energy minima, ie, a sheared film of liquid can retain its basic layered structure, though its lateral in-plane ordering may be modified or lost.
Page 44 - Between two surfaces that are completely smooth (or 'unstructured') the liquid molecules will be induced to order into layers, but there will be no lateral ordering within the layers. In other words, there will be positional ordering normal but not parallel to the surfaces. However, if the surfaces have a crystalline (periodic) lattice, this will induce ordering parallel to the surfaces as well (Fig.
Page 48 - During sliding, transitions can occur between n solidlike layers and (n-1) layers or (n+1) layers, and the details of the motion depend critically on the externally applied load, the temperature, the sliding velocity, the twist angle and the sliding direction relative to the surface lattices.
Page 20 - Philips Research Laboratories, PO Box 80.000, 5600 JA Eindhoven, The Netherlands ABSTRACT The impact of high doping levels on the threshold voltage of MOS transistors is discussed.
Page 36 - Laplace pressure, or attractive 'capillary' force, between hydrophilic surfaces may make the adhesion stronger than in inert gas or vacuum. When totally immersed in a liquid the force between two surfaces is once again completely modified from that in vacuum or air (vapor). The van der Waals attraction is generally reduced, but other forces now come into play which can qualitatively change both the range and even the sign of the interaction.
Page 45 - KCl solution, due to potassium ion adsorption the water between the surfaces becomes ordered, resulting in an oscillatory force profile where the adhesive minima occur at discrete separations of about 0.25 nm, corresponding to integral numbers of water layers. The whole interaction potential was now found to depend on the orientation of the surface lattices, and the effect extended at least four molecular layers.
Page 188 - Barth, F. Pourahmadi, R. Mayer, J. Poydock, and K. Petersen, "A monolithic silicon accelerometer with integral air damping and overrange protection,



