What people are saying - Write a review
We haven't found any reviews in the usual places.
Gao 5iIno 49PGaAs HETEROSTRUCTURE DEVICES
LOWFREQUENCY NOISE AND FREQUENCY DISPERSION
PCHANNEL InAlAsInxGaixAs x 033 0 65 STRAINED
3 other sections not shown
1/f noise 2DEG AlGaAs AlGaAs/GaAs HEMTs annealing bandgap bias conditions carriers conduction band D-mode deep traps demonstrated device characteristics device performance doped Drain-source voltage dual-channel E/D-mode HIGFET enhancement etching evaluated fabricated FET's fflGFETs Figure frequency GaAs GalnP/GaAs HEMTs gate bias Gate dimensions gate leakage gate voltage gate-length Gate-source voltage HEMT's heterostructures HIGFET inverters high speed higher I-V characteristics IEEE impact ionization implant InAlAs buffer InAlAs/InGaAs HIGFETs increase InGaAs channel integrated circuits ion implantation Isub kink effect lattice matched lift-off material system measurements mesa MESFETs mobility mS/mm noise margin observed ohmic contacts operation output conductance p-buffer p-doped p-type pinch-off region results of Fig Schottky barrier Schottky barrier height semiconductor shown in Fig shows sidegating single-channel spectra strained channel substrate injection subthreshold current Temperature dependent tensile stress threshold voltage transconductance transfer characteristics trap level undoped InAlAs valence band values WSix film WSix gates