Optical Characterization of Semiconductors, Volumes 65-67D. B. Kushev Coverage includes: photoluminescence; FIR spectroscopy; gallium arsenide; and molecular beam epitaxy. |
Contents
Optical Inverstigations of Novel PbTe pinip Structures | 1 |
Optical Control of Electrical and Structural Thin Film Properties | 19 |
Optical Identification of PbO Films Crystal Modification | 27 |
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absorption acceptors alkoxide annealing atom barium titanate BaTiO3 bulk calculated carrier cation charge coefficient composition compound concentration conductivity Copyright Trans Tech crystal Curie Curie temperature curves decrease defect density dependence dielectric constant dielectric function dipole domain walls donor dopant doped effect electric field electrical properties electron energy equation exciton experimental ferroelectric Figure films formation frequency function GaAs grain boundary high temperature impurities increase infrared interface ions laser lattice layer M-centre measurements microstructure modes n-type observed obtained optical orthorhombic oxide oxygen parameters particle PbTe peak permittivity perovskite phase phonon Phys piezoelectric polarization powder PTCR Raman region resistance room temperature sample segregation semiconductors shown in Fig silicon SIMOX sintering solid solution specimens spectra spectrum SrTiO stoichiometry structure substrate superconducting superlattice surface technique tetragonal thermistors thermopower thickness Trans Tech Publications transition metal undoped vacancies values wavelength