Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 10

Front Cover
Takeshi Hattori
The Electrochemical Society, 2007 - Microelectronics - 481 pages
Proceedings from an international symposium held in October 2007 during the Fall Meeting of the Electrochemical Society in Washington, D.C. Following an opening paper reviewing the key developments in semiconductor cleaning in the past 20 years, the remaining 56 contributions are organized into sections on cleaning challenges for nano-scale devices, dry cleaning, wet etching, megasonic cleaning, metal contamination, photoresist removal, single wafer cleaning, contact hole/trench cleaning, front end of the line cleaning, particle removal/interactions, back end of the line cleaning, CMP cleaning, and photomask cleaning. A sampling of topics: thermal cleaning of silicon nitride with fluorine and additive mixture, removal of backside particles by a single wafer megasonic system, dissemination of metallic contamination during IC manufacturing, and wet resist vs. implant energy. The accompanying CD-ROM contains proceedings from the ECS Semiconductor Cleaning Symposia 1-10. No subject index.
 

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Contents

Particle Removal from MicrometerSized Trenches Using HighVelocityAerosol
55
Maintaining a Stable Etch Selectivity between Silicon Nitride and Silicon Dioxide
63
Etching of Thermal SiO2 in Supercritical CO2 S Malhouitre J Van Hoeymissen C Case and P Granger
71
Removal of Organic Wax and Particles on Silicon after Batch Type Polishing by
79
Damage Clustering and DamageSize Distributions After Megasonic Cleaning
87
Removal of Backside Particles by a Single Wafer Megasonic System
95
Particle Removal from Si Substrates in Organic Solvents using Megasonic Energy
101
Using Megasonics to Extend Chemical Cleans for 45nm Technology
109
The Impact of Drying Methods on Defect Generation in Deep Trench Processing
275
The Effect of Delay Between Dry Etch and Wet Clean Processing Steps on
283
Via Failures in a Plug Process Due to Incomplete Via Clean Chemistry Removal
291
Liquid Infiltration Mechanism for Cleaning in Deep Microholes
299
Wet Etching Step Evolutions for Selective Removal on Silicide or Germanide
309
Challenges in Nickel Platinum Silicide Wet Etching for Sub65nm Device
321
Selective Removal of UnReacted NiPt Towards
327
Zero Defectivity Dual Gate Processing
335

High Efficiency Wafer Backside Cleaning with Full Coverage Megasonics Spin
117
Quantitative Measurement of Pattern Collapse and Particle Removal Force
123
The Metallic Contamination Related Whisker Defect During Deposition and Its
133
Dissemination of Metallic Contamination During IC Manufacturing
143
Shortloop Issues
151
Automating Metal LiftOff for Mass MEMS Production
159
A New Approach for FEOL Critical Wafer Surface Cleaning
167
AllWet Strip Approaches for PostEtch Photoresist Layers After LowK
177
PlasmaLess Photoresist Stripping
189
Wet Resist Strip Capability vs Implant Energy
197
Single Wafer Tool Cleaning for Bilayer Photoresist Rework Stripper
203
Effect of Ashing Strip and Annealing Process on the Dopant Concentration of
211
Post IonImplant Photoresist Removal via Wet Chemical Cleans Combined with
219
A Review of Microelectronic Manufacturing Applications Using DMSOBased
227
Novel Wet Photoresist Strip for Wafer Level Packaging
235
Advanced Surface Preparation Development on a 300 mm Single Wafer Spinon
249
Gate Oxide Cleans on Single Wafer Tool
257
Challenges in SubMicron Contact Hole Cleaning
267
Interactions of Sapphire Surfaces with Standard Cleaning Solutions
343
Local Removal Frequency of Nano Particles in Megasonic Cleaning
353
Effect of Particle Deposition and WetDry Cleaning Methods on Particle Removal
361
Nano Particle Control on 300mmwafers in Supercritical Fluid Technology
369
Parametric Nano Particle Cleaning
377
Elimination of Post CuCMP Watermark by Optimizing Post CMP Clean to Control Cu Dissolution
387
Electrochemical Behavior of Copper in PostViaEtch Cleaning Solutions
395
A Novel Concept for Contact Etch Residue Removal
403
Modifications of Porous Lowk by Plasma Treatments and Wet Cleans
409
Surface Preparation in CMP Process Post CMP Cleaning and Defects
419
Post CuCMP Engineering Challenges for the 65 nm Technology Nodes and
431
Post W CMP Cleaning Without HF Cleans
441
Incorporation of Cu Passivators in PostCMP Cleaners
447
Effect of Poly Silicon Wettability on Polymeric Residue Contamination
455
Particle Adhesion to Photomask Substrates
465
Removal of Gold Particles from Chromium Oxynitride Surface with Dilute Sulfuric Acid Solutions
471
Author Index
479
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