Semiconductor lasers II: 6-7 November 1996, Beijing, China
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VCSEL array fabricated by selective etching and selective oxidation 2886529
MIDIR SEMICONDUCTOR LASERS
Highly reliable 808nm laser diodes with AllnCaAs strained quantum well grown by MOCVD
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absorption coefficient active layer active region AlGaAs amplitude Appl band gap calculated carrier cavity length characteristics cladding layer coherence confinement device DFB lasers differential quantum efficiency diffusion dislocations distribution doped effect energy epitaxy equation etching exciton fabricated far-field feedback fiber frequency front facet function Gaussian beam grating grown growth heterostructure HF-pulsed IEEE increase InGaAs injected current intensity interdiffusion interface interferometer intersubband laser diode laser structure lasing Lett light linewidth maximum measured mesa mode modulation obtained OICETS operation optical bistability Optoelectronics oscillation output power oxidation parameters peak photon Phys pulse pumping quantum efficiency Quantum Electron quantum well lasers refractive index ridge samples semiconductor lasers shown in Fig spectrum spontaneous emission strained stripe lasers subband superlattice surface emitting thickness threshold beam spot threshold current density upconversion luminescence VCSEL wafer Wang waveguide wavelength width ZBLAN