## Advances in Imaging and Electron Physics, Volume 109Advances in Imaging & Electron Physics merges two long-running serials--Advances in Electronics & Electron Physics and Advances in Optical & Electron Microscopy. The series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science and digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains. |

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Advances in Imaging and Electron Physics, Volume 106 Peter W. Hawkes,Benjamin Kazan,Tom Mulvey No preview available - 1999 |

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Appl applications Arrhenius plots bias capacitance capacitance meter capacitance transient capacitor capture cross section carriers cell cellular neural networks channel charge Chua CNN structure coding constant conventional CNN corresponding CR-DLTS data points Daubechies Daubechies wavelets Deen deep levels deep-level transient spectroscopy defect defined denotes devices DLTS DLTS signal DTFCNN dynamics electron emission pulse equation example FCNN FCNN in Eq feedback circuit FIGURE filling pulse frequency fuzzy number fuzzy set given IEEE Trans image processing implementation impulsive noise input interface trap JFETs Jour Kimerling Kolev lattice points learning algorithms magnitude mathematical morphology matrix measurements median filter membership functions method min(i MMCNN MOSFETs obtained operations output p-n junction parameters Phys Proc pseudo-logarithmic region sample scaling function scan semiconductor shown in Fig silicon technique temperature template Theorem theta series transistors type-II FCNN valence band vector vector quantization wavelet coefficients