Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Other Emerging Diele[c]trics VIII: Proceedings of the International Symposium
Ram Ekwal Sah
The Electrochemical Society, 2005 - Science - 588 pages
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anneal Appl applied atoms band bias bonds breakdown calculated carrier characteristics charge chemical compared concentration constant curves damage decrease defects degradation density dependence deposition determined devices dielectric diffusion distribution dose effect electrical electron energy etch experimental field Figure films formed frequency function gate grown growth HfO2 high-k higher hole hydrogen IEEE important improved increase indicating injection interface laser layer Lett lower materials measured mechanism metal method mobility NBTI nitride nitrogen observed obtained oxide oxygen passivation peak performance Phys physical plasma pore porosity positive charges present properties range recovery reduced reliability reported respectively samples shift shown shows silicon SiO2 SiON spectra stack step strained stress structure substrate surface technique Technology temperature thermal thickness thin transistors traps typical values voltage wafer
Page 370 - Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.
Page 291 - Certain commercial equipment, instruments, or materials are identified in this paper in order to adequately specify the experimental procedure. Such identification does not imply recommendation or endorsement by the National Institute of Standards and Technology, nor does it imply that the materials or equipment identified are necessarily the best available for the purpose . Mat.
Page 162 - Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS).
Page 480 - This work was partly supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology and from the Japan Society for the Promotion of Science.
Page 241 - Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911.
Page 113 - Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8LT, Scotland UK.
Page 123 - Sg ft -ft 0) *This work was supported by the UK Engineering and Physical Sciences Research Council (EPSRC) under Grant GR/R94428. and c,j is transmitted by Tx j at time i. Throughout this paper, Z*, Zr, and ZH represent "conjugate", "transpose", and "conjugate and transpose
Page 95 - S. Mittal and A. Haranahalli, "Gate oxide charging and its elimination for metal antenna capacitor and transistor in VLSI CMOS double layer metal technology", Symposium on VLSI Technology, p73, 1989 .