What people are saying - Write a review
We haven't found any reviews in the usual places.
GaAs GROWTH ON Si INTEGRATED CIRCUITS
LIGHTEMITTING DIODE FABRICATION
INTERCONNECTION OF LIGHTEMITTING DIODES
2 other sections not shown
A6 and A8 AlGaAs alloying chemical vapor deposition chip CMOS contact pads Cross sectional view deposition temperature detection circuit detector determined device performance differential quantum efficiency electron surface mobility electronic devices epitaxial etch etchants evaporation field-effect transistor Figure film GaAs control substrate GaAs deposition GaAs growth area GaAs growth region GaAs layers GaAs LED fabrication GaAs optical devices GaAs/Si gate voltage Hewlett Packard I-V characteristic I-V measurements initial integrated circuits interconnect large LED layers deposited LEDs from sample Lett light output Light-Emitting Diodes luminescence metalization MOCVD monolithic optoelectronic circuit MOS processing MOSFETs n-channel FET numerical aperture observed obtained ohmic contact Optical micrograph p-n junction photoluminescence photoresist Phys point defects post GaAs LED power versus current probe tips problems procedure processing technologies R. M. Fletcher reflecting objective sample A6 shown in Fig small signal resistance Table techniques technologies are mutually threshold voltage transfer function transistors were tested wafer