Monolithic Integration of Gallium Arsenide Light-emitting Diodes and Silicon Field-effect Transistors |
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Page 50
... LED Testing Luminescence from the LEDs in sample A6 was observed using the infrared viewer at 120mA for the smaller geometry and at 180mA for the larger geometry . The I - V characteristics of the devices are shown in Fig . 3.5 . The ...
... LED Testing Luminescence from the LEDs in sample A6 was observed using the infrared viewer at 120mA for the smaller geometry and at 180mA for the larger geometry . The I - V characteristics of the devices are shown in Fig . 3.5 . The ...
Page 54
... light and dP / dI the differential change in light power with drive current . Table 3.1 compares the values obtained for sample A6 and the GaAs control substrate with Fletcher's observation . The LEDs from sample A6 are less efficient ...
... light and dP / dI the differential change in light power with drive current . Table 3.1 compares the values obtained for sample A6 and the GaAs control substrate with Fletcher's observation . The LEDs from sample A6 are less efficient ...
Page 58
... LEDs on a Si substrate containing MOSFETs has been described in the previous ... sample A6 was used to drive an LED on the same sample , is described . To ... LEDs in sample A6 can be observed at 120mA to 180mA . The I - V characteristic ...
... LEDs on a Si substrate containing MOSFETs has been described in the previous ... sample A6 was used to drive an LED on the same sample , is described . To ... LEDs in sample A6 can be observed at 120mA to 180mA . The I - V characteristic ...
Contents
LIGHTEMITTING DIODE FABRICATION | 42 |
INTERCONNECTION OF LIGHTEMITTING DIODES | 58 |
REFERENCES FOR CHAPTER 5 | 80 |
Copyright | |
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Common terms and phrases
A.C. measurements A6 and A8 AlGaAs chemical vapor deposition chip CMOS contact pads Cross sectional view deposition temperature detection circuit detector determined Differential quantum efficiency electron surface mobility electronic devices epitaxial etch etchants evaporation field-effect transistor Figure film GaAs control substrate GaAs deposition GaAs growth area GaAs growth region GaAs layers GaAs LED fabrication GaAs optical devices GaAs/Si gate voltage Hewlett Packard homo junction I-V characteristic I-V measurements initial INTEGRATED CIRCUITS interconnect large LED layers deposited LED from sample Lett light output Light-Emitting Diodes luminescence metalization MOCVD monolithic optoelectronic circuit MOS processing MOSFETs n-channel FET NMOS numerical aperture observed obtained ohmic contact Optical micrograph Oscilloscope p-n junction photoluminescence photoresist Phys post GaAs LED power versus current probe tips problems procedure R. M. Fletcher REFERENCES FOR CHAPTER reflecting objective sample A6 semiconductor shown in Fig SiO2 small signal resistance surface emitting transfer function transistors were tested wafer