Monolithic integration of gallium arsenide light-emitting diodes and silicon field-effect transistors |
From inside the book
Results 1-3 of 5
Page i
From these measurements a list of requirements on the Si MOS circuits* to insure
high quality epitaxial GaAs growth* was determined. Current versus ... Response
time measurements were bandwidth limited to 23kHz by the detection circuit.
From these measurements a list of requirements on the Si MOS circuits* to insure
high quality epitaxial GaAs growth* was determined. Current versus ... Response
time measurements were bandwidth limited to 23kHz by the detection circuit.
Page 66
assumptions made in modeling the detection system. Data from the P-I
measurements under ... 4.5 shows a block diagram of the system used to take
measurements on the optoelectronic circuit. The Beck 36X objective was
mounted in a ...
assumptions made in modeling the detection system. Data from the P-I
measurements under ... 4.5 shows a block diagram of the system used to take
measurements on the optoelectronic circuit. The Beck 36X objective was
mounted in a ...
Page 73
4.4 Conclusions In this chapter a monolithic optoelectronic circuit consisting of a
GaAs LED driven by a Si MOS transistor on the the ... Measurements of the
response time of the circuit were bandwidth limited to 23kHz by the detection
circuit.
4.4 Conclusions In this chapter a monolithic optoelectronic circuit consisting of a
GaAs LED driven by a Si MOS transistor on the the ... Measurements of the
response time of the circuit were bandwidth limited to 23kHz by the detection
circuit.
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
GaAs GROWTH ON Si INTEGRATED CIRCUITS | 8 |
LIGHTEMITTING DIODE FABRICATION | 42 |
INTERCONNECTION OF LIGHTEMITTING DIODES | 58 |
Copyright | |
2 other sections not shown
Common terms and phrases
A6 and A8 AlGaAs alloying chemical vapor deposition chip CMOS contact pads Cross sectional view deposition temperature detection circuit detector determined device performance differential quantum efficiency electron surface mobility electronic devices epitaxial etch etchants evaporation field-effect transistor Figure film GaAs control substrate GaAs deposition GaAs growth area GaAs growth region GaAs layers GaAs LED fabrication GaAs optical devices GaAs/Si gate voltage Hewlett Packard I-V characteristic I-V measurements initial integrated circuits interconnect large LED layers deposited LEDs from sample Lett light output Light-Emitting Diodes luminescence metalization MOCVD monolithic optoelectronic circuit MOS processing MOSFETs n-channel FET numerical aperture observed obtained ohmic contact Optical micrograph p-n junction photoluminescence photoresist Phys point defects post GaAs LED power versus current probe tips problems procedure processing technologies R. M. Fletcher reflecting objective sample A6 shown in Fig small signal resistance Table techniques technologies are mutually threshold voltage transfer function transistors were tested wafer
Bibliographic information
| Title | Monolithic integration of gallium arsenide light-emitting diodes and silicon field-effect transistors |
| Author | Ruby Nandini Ghosh |
| Publisher | Cornell University, January, 1986 |
| Original from | Cornell University |
| Digitized | Dec 6, 2010 |
| Length | 182 pages |
| Subjects | › › Field-effect transistors Gallium arsenide semiconductors Technology & Engineering / Electronics / Semiconductors Technology & Engineering / Electronics / Transistors |
| Export Citation | BiBTeX EndNote RefMan |