Monolithic integration of gallium arsenide light-emitting diodes and silicon field-effect transistors |
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Page 25
Table 2.4 Summary of the D.C. device parameters extracted from the initial f post
Ge and post GaAs LED fabrication measurements of the n-channel transistors. *
The electron surface mobility was not measured for these samples. also included
...
Table 2.4 Summary of the D.C. device parameters extracted from the initial f post
Ge and post GaAs LED fabrication measurements of the n-channel transistors. *
The electron surface mobility was not measured for these samples. also included
...
Page 26
The analytical procedure used to determine these parameters is described in
Appendix I. The electron surface mobility was not determined because the offset
in due to the resistance of the contact pads themselves makes such a calculation
...
The analytical procedure used to determine these parameters is described in
Appendix I. The electron surface mobility was not determined because the offset
in due to the resistance of the contact pads themselves makes such a calculation
...
Page 83
The electron surface mobility was determined as follows. When the the transistor
is in the saturation region the drain current may be approximated by: V»t) =^<VV2
- (A-U where C. is the gate oxide capacitance per unit area. W the gate width.
The electron surface mobility was determined as follows. When the the transistor
is in the saturation region the drain current may be approximated by: V»t) =^<VV2
- (A-U where C. is the gate oxide capacitance per unit area. W the gate width.
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Contents
GaAs GROWTH ON Si INTEGRATED CIRCUITS | 8 |
LIGHTEMITTING DIODE FABRICATION | 42 |
INTERCONNECTION OF LIGHTEMITTING DIODES | 58 |
Copyright | |
2 other sections not shown
Common terms and phrases
A6 and A8 AlGaAs alloying chemical vapor deposition chip CMOS contact pads Cross sectional view deposition temperature detection circuit detector determined device performance differential quantum efficiency electron surface mobility electronic devices epitaxial etch etchants evaporation field-effect transistor Figure film GaAs control substrate GaAs deposition GaAs growth area GaAs growth region GaAs layers GaAs LED fabrication GaAs optical devices GaAs/Si gate voltage Hewlett Packard I-V characteristic I-V measurements initial integrated circuits interconnect large LED layers deposited LEDs from sample Lett light output Light-Emitting Diodes luminescence metalization MOCVD monolithic optoelectronic circuit MOS processing MOSFETs n-channel FET numerical aperture observed obtained ohmic contact Optical micrograph p-n junction photoluminescence photoresist Phys point defects post GaAs LED power versus current probe tips problems procedure processing technologies R. M. Fletcher reflecting objective sample A6 shown in Fig small signal resistance Table techniques technologies are mutually threshold voltage transfer function transistors were tested wafer
Bibliographic information
| Title | Monolithic integration of gallium arsenide light-emitting diodes and silicon field-effect transistors |
| Author | Ruby Nandini Ghosh |
| Publisher | Cornell University, January, 1986 |
| Original from | Cornell University |
| Digitized | Dec 6, 2010 |
| Length | 182 pages |
| Subjects | › › Field-effect transistors Gallium arsenide semiconductors Technology & Engineering / Electronics / Semiconductors Technology & Engineering / Electronics / Transistors |
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