Monolithic Integration of Gallium Arsenide Light-emitting Diodes and Silicon Field-effect Transistors |
Contents
LIGHTEMITTING DIODE FABRICATION | 42 |
INTERCONNECTION OF LIGHTEMITTING DIODES | 58 |
REFERENCES FOR CHAPTER 5 | 80 |
Copyright | |
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Common terms and phrases
A.C. measurements A6 and A8 AlGaAs chemical vapor deposition chip CMOS contact pads Cross sectional view deposition temperature detection circuit detector determined Differential quantum efficiency electron surface mobility electronic devices epitaxial etch etchants evaporation field-effect transistor Figure film GaAs control substrate GaAs deposition GaAs growth area GaAs growth region GaAs layers GaAs LED fabrication GaAs optical devices GaAs/Si gate voltage Hewlett Packard homo junction I-V characteristic I-V measurements initial INTEGRATED CIRCUITS interconnect large LED layers deposited LED from sample Lett light output Light-Emitting Diodes luminescence metalization MOCVD monolithic optoelectronic circuit MOS processing MOSFETs n-channel FET NMOS numerical aperture observed obtained ohmic contact Optical micrograph Oscilloscope p-n junction photoluminescence photoresist Phys post GaAs LED power versus current probe tips problems procedure R. M. Fletcher REFERENCES FOR CHAPTER reflecting objective sample A6 semiconductor shown in Fig SiO2 small signal resistance surface emitting transfer function transistors were tested wafer