Nuclear Methods in Semiconductor PhysicsG. Langouche, J.C. Soares, J.P. Stoquert The two areas of experimental research explored in this volume are: the Hyperfine Interaction Methods, focusing on the microscopic configuration surrounding radioactive probe atoms in semiconductors, and Ion Beam Techniques using scattering, energy loss and channeling properties of highly energetic ions penetrating in semiconductors. A large area of interesting local defect studies is discussed. Less commonly used methods in the semiconductor field, such as nuclear magnetic resonance, electron nuclear double resonance, muon spin resonance and positron annihilation, are also reviewed. The broad scope of the contributions clearly demonstrates the growing interest in the use of sometimes fairly unconventional nuclear methods in the field of semiconductor physics. |
Contents
| 1 | |
| 14 | |
Chapter 3 An investigation by resistance and photoluminescence measurements of highenergy heavyionirradiated GaAs
| 21 |
Chapter 4 High energy ion irradiation of germanium
| 25 |
Chapter 5 Ion beam analysis of mismatched epitaxial heterostructures
| 30 |
Chapter 6 Dechanneling cross section for misfit dislocations
| 36 |
Chapter 7 Ion channeling study of P implantation damage in CdTe
| 41 |
Chapter 8 Investigation of the amorphization process in ion implanted A111 Bv compounds
| 47 |
Chapter 26 A 129 I Mossbauer investigation of the ohmic contact formation mechanism in the AuTeAunGaAs system questioned and confirmed by ... | 141 |
Chapter 27 Donorhydrogen complexes in silicon studied by Mössbauer spectroscopy
| 147 |
Chapter 28 Mossbauer spectroscopy investigation of the DXcenter in Teimplanted AlxGa1xAs
| 151 |
Chapter 29 Nuclear interactions of defects in semiconductors magnetic resonance measurements | 154 |
Chapter 30 Positron annihilation in silicon single crystals | 163 |
Chapter 31 Positron annihilation and charge state of the vacancies in asgrown and electron irradiated GaAs
| 166 |
Chapter 32 β NMR study on the lattice locations of boron implanted into silicon
| 173 |
Chapter 33 High resolution conversion electron spectroscopy of impurities in semiconductors | 179 |
Chapter 9 Nucleation of point defects in lowfluence ionimplanted GaAs and GaP
| 52 |
Chapter 10 Precision measurement of axial channel angles
| 56 |
Chapter 11 Investigation of defects by RBSchanneling methods
| 59 |
Chapter 12 Differences in the damage production of proton implanted GaAs Ge and Si investigated bytemperature dependent dechannelingBachmann | 64 |
Chapter 13 Application of 1 60 RBS to heavy compound materials | 68 |
Chapter 14 Ar ion induced Xray emission for the analysis of light elements in CdTe | 71 |
Chapter 15 Elemental analysis of thin layers by elastic heavy ion scattering | 77 |
Chapter 16 Emission channeling studies in semiconductors | 83 |
Chapter 17 Lattice site changes of ion implanted 8Li in Si studied by alpha emission channeling | 91 |
Chapter 18 Neutron transmutation doped silicon technological and economic aspects | 95 |
Chapter 19 Efficiency of neutron transmutation doping of InP investigated by optical and electrical methods | 101 |
Chapter 20 The electrical and radioactive assessment of the transmutation doping of GaAs following implantationby 111In
| 106 |
Chapter 21 Ion beam deposition and insitu ion beam analysis | 109 |
Chapter 22 A focused gasion beam system for submicron application | 120 |
Chapter 23 Muondecay positron channeling in semiconductors | 125 |
Chapter 24 Single and double buried epitaxial metallic layers in Si prepared by ion implantation | 130 |
Chapter 25 Mossbauer and channeling measurements on buried layers of CoSi2 in Si | 138 |
Chapter 34 Identification of band gap states by deep level transient spectroscopy on radioactive probes | 186 |
Chapter 35 PAC studies on the formation and stability of acceptordefect complexes in semiconductors | 189 |
Chapter 36 Quenchinduced defects in silicon | 198 |
Chapter 37 Dynamic behaviour of CdCu pairs in Si observed by PAC | 202 |
a combined PAC and resistivity study | 205 |
Chapter 39 Dynamics and electronic transitions at impurity complexes in semiconductors | 209 |
Chapter 40 Acceptordonor pairs in germanium | 217 |
Chapter 41 Magnetic behavior of isolated Fe and Ni ions in semiconducting compounds | 221 |
Chapter 42 PAC studies on impurities in ZnO | 223 |
Chapter 43 PAC investigations of the shallow donor environment in GaAs | 227 |
bulk phases thin films and nuclear reactiondoping | 231 |
Chapter 45 Annealing of lattice defects in chalcopyrite semiconductors TDPAC investigations | 236 |
In by doping with Li atoms | 240 |
Chapter 47 Perturbed angular correlation observation of vacancyindium atom defect complexes in HgCdTe | 244 |
Chapter 48 Hyperfine interactions and Rutherford backscattering studies of Cd and Hg in CdTe singlecrystals and thin films | 248 |
| 255 | |
Common terms and phrases
acceptor angular annealing Appl axial B.V. All rights Burgers vector CdTe channeling concentration configuration CoSi2 layers crystal damage decay dechanneling defect complexes Deicher density dependence depth diffusion dislocation displacement distance donor dopants doping electrical electron Elsevier Science Publishers energy epitaxial experimental Fermi level films fluence formation fraction frequency function GaAs GANIL germanium hydrogen Hyperfine Interactions impurity influence Instr ion beam Ion Beam Analysis ion implantation irradiation isotopes lattice Lett material measurements Meth Methods in Physics minimum yield Mossbauer Mossbauer spectroscopy n-type North-Holland Nucl nuclear observed obtained pairs parameters Phys Physics Research Section point defects positron probe atoms quadrupole radioactive rapid thermal annealing resistivity room temperature sample Science Publishers B.V. semiconductors shown in fig shows silicon Skudlik spectra spectroscopy spectrum structure substrate surface technique thermal tion transition trapping vacancies Wichert