Evolution of Surface and Thin Film Microstructure: Volume 280
Harry A. Atwater, Eric Chason, Marcia H. Grabow, Max G. Lagally
Cambridge University Press, Oct 27, 1993 - Technology & Engineering - 752 pages
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
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STEPPED SURFACES AND INTERNAL FILM MICROSTRUCTURES
ATOMISTICS AND SURFACE MORPHOLOGY
ROLE OF ATOMIC SIZE AND VALENCE IN BONDING AND DIFFUSION
68 other sections not shown
adatom addition alloy amorphous analysis annealing Appl atoms beam boundary calculated carbon changes chemical composition concentration consistent constant corresponding crystal decrease defects density dependence deposition determined diamond diffraction diffusion direction DISCUSSION dislocations edge effect electron energy epitaxial experimental experiments Figure formation formed function GaAs grain grain boundaries grown growth higher increase indicated initial intensity interface islands lattice layer Lett Materials measurements mechanism metal method micrograph microscopy misfit morphology multilayer nucleation observed obtained occurs orientation oxidation oxygen parameters pattern peak phase Phys plane position present Proc properties range reaction REFERENCES reflection region reported Research respectively roughness sample scale scanning scattering shown in Figure shows silicon simulation solid sputtering step strain stress structure substrate surface Symp technique temperature thermal thickness thin films transition X-ray