Design Principles and Performance of Modulation-doped Field Effect Transistors for Low Noise Microwave Amplification |
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2DEG AlGaAs buffer associated gain Bias dependence buffer layer current cap layer capacitance channel MODFET charge control model cm²/V.s conduction band cryogenic decreases device doping drain characteristics drain conductance drain current E-mode QW MODFET electric field electrical length Electron Mobility electron sheet density enhancement-mode equivalent circuit model etch fabricated Field Effect Transistor Fmin GaAs buffer layer GaAs MESFET Gain dB gate bias gate length gate recess Gate to Source Gunn domain Hall mobility Heff HEMT heterojunction Heterostructures higher IEEE Elect IEEE Trans increases leakage current Lett low noise Microwave modulation-doped Molecular Beam Epitaxial mS/mm noise figure noise performance noise temperature nt-GaAs ohmic contact pinchoff power gain QW MODFET 1250 recessed gate reduced region result saturation velocity sheet resistivity source resistance substrate Tmin transconductance undoped AlGaAs spacer Undoped GaAs undoped spacer layer unrecessed