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ELECTRICAL LENGTH EFFECTS
BUFFER LAYER CURRENT
5 other sections not shown
2DEG 7As buffer AIGaAs AlGaAs buffer As/GaAs Bias dependence buffer layer current capacitance channel MODFET charge control model cm V«s conduction band cryogenic decreases device doping drain characteristics drain conductance drain current E-mode QW MODFET electric field electrical length Electron Mobility electron sheet density Epitaxial equivalent circuit model etch fabricated feedback capacitance Field Effect Transistor GaAs buffer layer gate bias gate recess Gunn domain Hall mobility HEMT heterojunction Heterostructures higher IEEE Elect IEEE Trans increases L.F. Eastman leakage current Lett low noise Microwave modulation-doped Molecular Beam Epitaxial Morkoc mS/mm n+-GaAs cap layer noise figure noise performance noise temperature ohmic contact physical temperature pinchoff power gain QW MODFET 1250 recessed gate reduced region result saturation velocity sheet resistivity short electrical length source resistance substrate threshold voltage transconductance undoped AlGaAs spacer Undoped GaAs undoped spacer layer undoped spacer thickness