Semiconductor Materials for Optoelectronics and LTMBE Materials: Proceedings of Symposium A on Semiconductor Materials for Optoelectronic Devices, OEICs and Photonics, and Symposium B on Low Temperature Molecular Beam Epitaxial III-V Materials : Physics and Applications, of the E-MRS Spring Conference, Strasbourg, France, May 4-7 1993J. P. Hirtz These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; and polymers for optoelectrics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years. |
Contents
Preface xi | 105 |
EPITAXY FOR OPTOELECTRONIC APPLICATIONS | 120 |
research for novel metalorganic precursors | 147 |
Copyright | |
21 other sections not shown
Other editions - View all
Common terms and phrases
absorption AlGaAs annealing Appl as-grown atoms band gap barrier cap layer chemical beam epitaxy cm² cm³ coefficient composition concentration Cryst crystals decrease deep level defects density devices diffraction diffusion diode dislocations doping effect electrical electron Elsevier Sequoia emission epilayer etching exciton experimental film FWHM GaAs GaAs layers GaInAsP growth temperature heterostructure IEEE implantation InAlAs increase InGaAs InGaAs/InP intensity interdiffusion interface laser diodes lattice layer structure layer thickness layers grown Lett low temperature LT-GaAs mask material measurements MESFET metal-organic modulation molecular beam epitaxy MOVPE observed obtained optical optoelectronic oxide p-type parameters peak phonon photoluminescence Phys precursors properties quantum Raman region regrowth room temperature samples Schottky semiconductor shadow mask shown in Fig shows silicon spectra strain superlattice surface Technol thermal threshold current tion transition undoped valence band vapour pressure voltage wafer wavelength width X-ray ZnSe