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PRINCIPLES OF OPERATION
INFLUENCE OF QUANTUM WELL WIDTH
6 other sections not shown
0.15 indium composition 2DEG sheet density AIGaAs AIGaAs/InGaAs on GaAs aluminum composition approximately channel charging channel MODFETs chapter cm2/Vsec conduction band current density current gain cutoff device in Fig device layout device performance devices reported drain delay drain resistances electron beam lithography electron mobility electron transit etching extrinsic field effect transistor GaAs gain cutoff frequency gate length gate metal resistance gate resistance gate width gate-to-drain capacitance HEMT heterojunction high 2DEG sheet increase InGaAs InGaAs channel InGaAs quantum intrinsic delay l-V characteristics layer structure linear extrapolation lithography mA/mm maximum 2DEG sheet microwave millimeter wave mobility MODFET Vds mole fraction mS/mm mushroom gate ohmic contact optimization parameters parasitic percent power gain power-added efficiency present author psec pseudomorphic AIGaAs/InGaAs MODFET Q-mm quantum well width samples saturation velocity sheet resistivity source resistance spacer temperature total delay transconductance u.m gate ultra high speed Volts